Diodes Inc Dual N-Channel MOSFET, 1.38 A, 20 V, 6-Pin SOT-563 DMG1024UV-7
- RS Stock No.:
- 822-2510P
- Mfr. Part No.:
- DMG1024UV-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 600 units (supplied on a reel)*
£52.20
(exc. VAT)
£62.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 600 - 1450 | £0.087 |
| 1500 + | £0.065 |
*price indicative
- RS Stock No.:
- 822-2510P
- Mfr. Part No.:
- DMG1024UV-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.38 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-563 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 530 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -6 V, +6 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.25mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 1.7mm | |
| Typical Gate Charge @ Vgs | 0.737 nC @ 4.5 V | |
| Transistor Material | Si | |
| Height | 0.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.38 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-563 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 530 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -6 V, +6 V | ||
Number of Elements per Chip 2 | ||
Width 1.25mm | ||
Maximum Operating Temperature +150 °C | ||
Length 1.7mm | ||
Typical Gate Charge @ Vgs 0.737 nC @ 4.5 V | ||
Transistor Material Si | ||
Height 0.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.