Vishay SQ Rugged P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 SQ2315ES-T1_GE3
- RS Stock No.:
- 819-3901P
- Mfr. Part No.:
- SQ2315ES-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£45.80
(exc. VAT)
£55.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 3,040 unit(s), ready to ship
Units | Per unit |
|---|---|
| 200 - 480 | £0.229 |
| 500 - 980 | £0.186 |
| 1000 - 1980 | £0.144 |
| 2000 + | £0.128 |
*price indicative
- RS Stock No.:
- 819-3901P
- Mfr. Part No.:
- SQ2315ES-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Series | SQ Rugged | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 92 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 8.4 nC @ 4.5 V | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Series SQ Rugged | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 92 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 8.4 nC @ 4.5 V | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Transistor Material Si | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor