Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
- RS Stock No.:
- 812-0616P
- Mfr. Part No.:
- IRFR210TRPBF
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£51.90
(exc. VAT)
£62.30
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.519 |
| 250 - 490 | £0.478 |
| 500 - 990 | £0.45 |
| 1000 + | £0.375 |
*price indicative
- RS Stock No.:
- 812-0616P
- Mfr. Part No.:
- IRFR210TRPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Forward Diode Voltage | 2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.2 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Forward Diode Voltage 2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
- COO (Country of Origin):
- MY
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor