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MPN

SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D


Available to back order for despatch 03/08/2021
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Price Each

£17.37

(exc. VAT)

£20.84

(inc. VAT)

Units

Added

Packaging Options:
RS Stock No.:
809-8991
Mfr. Part No.:
C2M0080120D
Brand:
Wolfspeed
COO (Country of Origin):
CN
UnitsPer unit
1 - 5£17.37
6 - 14£16.25
15 +£15.82

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.


• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

AttributeValue
Channel TypeN
Maximum Continuous Drain Current31 A
Maximum Drain Source Voltage1200 V
Package TypeTO-247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance208 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage3.2V
Minimum Gate Threshold Voltage1.7V
Maximum Power Dissipation208 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-10 V, +25 V
Number of Elements per Chip1
Width5.21mm
Transistor MaterialSiC
Maximum Operating Temperature+150 °C
Length16.13mm
Typical Gate Charge @ Vgs49.2 nC @ 20 V
Height21.1mm
Minimum Operating Temperature-55 °C