- RS Stock No.:
- 807-6692
- Mfr. Part No.:
- HUF75639G3
- Brand:
- Fairchild Semiconductor
- RS Stock No.:
- 807-6692
- Mfr. Part No.:
- HUF75639G3
- Brand:
- Fairchild Semiconductor
Legislation and Compliance
Product Details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 56 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 25 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 15.87mm |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 110 nC @ 20 V |
Width | 4.82mm |
Maximum Operating Temperature | +175 °C |
Height | 20.82mm |
Series | UltraFET |
Minimum Operating Temperature | -55 °C |
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