- RS Stock No.:
- 768-9332
- Mfr. Part No.:
- SiHG47N60E-GE3
- Brand:
- Vishay
24 In stock - FREE next working day delivery available
Added
Price Each
£7.75
(exc. VAT)
£9.30
(inc. VAT)
Units | Per unit |
1 - 9 | £7.75 |
10 - 24 | £6.74 |
25 - 49 | £6.20 |
50 - 99 | £5.43 |
100 + | £4.88 |
- RS Stock No.:
- 768-9332
- Mfr. Part No.:
- SiHG47N60E-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 47 A |
Maximum Drain Source Voltage | 600 V |
Series | E Series |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 64 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 357 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 15.87mm |
Typical Gate Charge @ Vgs | 147 nC @ 10 V |
Width | 5.31mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 20.7mm |
- RS Stock No.:
- 768-9332
- Mfr. Part No.:
- SiHG47N60E-GE3
- Brand:
- Vishay
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