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Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 ON Semiconductor NDC7001C

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Packaging Options:
RS Stock No.:
Mfr. Part No.:
ON Semiconductor
UnitsPer unitPer Pack*
10 - 90£0.28£2.80
100 - 490£0.176£1.76
500 - 990£0.171£1.71
1000 - 2990£0.166£1.66
3000 +£0.163£1.63
*price indicative

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Channel TypeN, P
Maximum Continuous Drain Current340 mA, 510 mA
Maximum Drain Source Voltage60 V
Package TypeSOT-23
Mounting TypeSurface Mount
Pin Count6
Maximum Drain Source Resistance4 Ω, 10 Ω
Channel ModeEnhancement
Minimum Gate Threshold Voltage1V
Maximum Power Dissipation960 mW
Transistor ConfigurationIsolated
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip2
Minimum Operating Temperature-55 °C
Transistor MaterialSi
Maximum Operating Temperature+150 °C
Typical Gate Charge @ Vgs1.1 nC @ 10 V, 1.6 nC @ 10 V