Diodes Inc N-Channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK DMN4036LK3-13
- RS Stock No.:
- 751-4199P
- Mfr. Part No.:
- DMN4036LK3-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 75 units (supplied on a continuous strip)*
£28.875
(exc. VAT)
£34.65
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 75 - 225 | £0.385 |
| 250 - 475 | £0.374 |
| 500 - 975 | £0.366 |
| 1000 + | £0.356 |
*price indicative
- RS Stock No.:
- 751-4199P
- Mfr. Part No.:
- DMN4036LK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12.2 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 61 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 8.49 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 9.2 nC @ 10 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 12.2 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 61 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 8.49 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 9.2 nC @ 10 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.