N-Channel MOSFET, 1.7 A, 30 V, 3-Pin SOT-23 onsemi NDS355AN
- RS Stock No.:
- 739-0167
- Mfr. Part No.:
- NDS355AN
- Brand:
- onsemi
120 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 5)
£0.432
(exc. VAT)
£0.518
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | £0.432 | £2.16 |
| 25 - 95 | £0.216 | £1.08 |
| 100 - 245 | £0.14 | £0.70 |
| 250 - 495 | £0.136 | £0.68 |
| 500 + | £0.134 | £0.67 |
| *price indicative | ||
- RS Stock No.:
- 739-0167
- Mfr. Part No.:
- NDS355AN
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.7 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 230 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 3.5 nC @ 5 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Transistor Material | Si |
| Length | 2.92mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.94mm |