BS170 N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 ON Semiconductor

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Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 5 Ω
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 830 mW
Typical Input Capacitance @ Vds 24 pF@ 10 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Number of Elements per Chip 1
Width 4.19mm
Dimensions 5.2 x 4.19 x 5.33mm
Length 5.2mm
Height 5.33mm
Maximum Operating Temperature +150 °C
10530 In stock for FREE next working day delivery
Price Each (In a Pack of 10)
£ 0.20
(exc. VAT)
£ 0.24
(inc. VAT)
Per unit
Per Pack*
10 - 90
100 - 240
250 - 490
500 +
*price indicative
Packaging Options: