P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NDS332P
- RS Stock No.:
- 671-1087
- Mfr. Part No.:
- NDS332P
- Brand:
- onsemi
Available to back order for despatch 16/07/2024
Added
Price Each (In a Pack of 10)
£0.316
(exc. VAT)
£0.379
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | £0.316 | £3.16 |
| 50 - 90 | £0.162 | £1.62 |
| 100 - 240 | £0.125 | £1.25 |
| 250 - 490 | £0.112 | £1.12 |
| 500 + | £0.109 | £1.09 |
| *price indicative | ||
- RS Stock No.:
- 671-1087
- Mfr. Part No.:
- NDS332P
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Typical Gate Charge @ Vgs | 3.7 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Length | 2.92mm |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 0.94mm |
| Minimum Operating Temperature | -55 °C |
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