P-Channel MOSFET, 2.6 A, 12 V, 3-Pin SOT-23 ON Semiconductor FDN306P

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 2.6 A
Maximum Drain Source Voltage 12 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 40 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 12 nC @ 4.5 V
Minimum Operating Temperature -55 °C
Series PowerTrench
Height 0.94mm
Maximum Operating Temperature +150 °C
Length 2.92mm
Width 1.4mm
Transistor Material Si
160 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£ 0.344
(exc. VAT)
£ 0.413
(inc. VAT)
Units
Per unit
Per Pack*
5 - 45
£0.344
£1.72
50 - 145
£0.326
£1.63
150 - 745
£0.276
£1.38
750 - 1495
£0.258
£1.29
1500 +
£0.24
£1.20
*price indicative
Packaging Options:
Related Products
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. P-Channel Power MOSFET ...
P-channel MOSFETs, The perfect fit for your design ...
Description:
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high ...
P-Channel MOSFET, Trench FET Gen III, Vishay Semiconductor. ...
Description:
P-Channel MOSFET, Trench FET Gen III, Vishay Semiconductor. MOSFET Transistors, Vishay Semiconductor.
Infineon’s dual power MOSFETs integrate two HEXFET® devices ...
Description:
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration. Dual N-Channel Power MOSFET, Infineon. MOSFET Transistors, Infineon.