Channel Type | P |
Maximum Continuous Drain Current | 40 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 60 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.69mm |
Series | HEXFET |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Height | 8.77mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Length | 10.54mm |