Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1
- RS Stock No.:
- 462-3449P
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Brand:
- Infineon
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Subtotal 10 units (supplied in a tube)*
£46.40
(exc. VAT)
£55.70
(inc. VAT)
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In Stock
- Plus 290 unit(s) shipping from 03 November 2025
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Units | Per unit |
|---|---|
| 10 - 24 | £4.64 |
| 25 - 49 | £4.45 |
| 50 - 99 | £4.25 |
| 100 + | £3.96 |
*price indicative
- RS Stock No.:
- 462-3449P
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ C3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.3mm | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.95mm | ||
Infineon CoolMOS™C3 Power MOSFET
Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1
This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.
Features & Benefits
• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures
Applications
• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance
What is the maximum operating temperature for this component?
It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.
How does the low gate charge benefit device operation?
A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.
Can this MOSFET handle repeated high-temperature cycling?
Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.
Is there a specific mounting style recommended for this device?
This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
