- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
460 In stock - FREE next working day delivery available
20 available from Europe for delivery within 1 working day(s).
Price Each (In a Pack of 10)
£0.581
(exc. VAT)
£0.697
(inc. VAT)
Units | Per unit | Per Pack* |
10 - 90 | £0.581 | £5.81 |
100 - 240 | £0.552 | £5.52 |
250 - 490 | £0.529 | £5.29 |
500 - 990 | £0.505 | £5.05 |
1000 + | £0.471 | £4.71 |
*price indicative |
- RS Stock No.:
- 462-3247
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 8.8 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 300 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 42 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 10 nC @ 10 V |
Width | 6.22mm |
Length | 6.5mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Series | SIPMOS |
Height | 2.3mm |
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