Vishay Silicon N-Channel MOSFET, 225 A, 100 V, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal 50 units (supplied on a continuous strip)*

£113.25

(exc. VAT)

£135.90

(inc. VAT)

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50 - 98£2.265
100 - 248£2.01
250 - 998£1.965
1000 +£1.93

*price indicative

Packaging Options:
RS Stock No.:
279-9971P
Mfr. Part No.:
SIRS5100DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

225 A

Maximum Drain Source Voltage

100 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested