Vishay N-Channel MOSFET, 24 A, 650 V D2PAK SIHB24N65E-GE3
- RS Stock No.:
- 256-7413P
- Mfr. Part No.:
- SIHB24N65E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£43.20
(exc. VAT)
£51.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 981 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 24 | £4.32 |
| 25 - 99 | £4.10 |
| 100 - 499 | £3.61 |
| 500 + | £3.11 |
*price indicative
- RS Stock No.:
- 256-7413P
- Mfr. Part No.:
- SIHB24N65E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-263 | |
| Mounting Type | Surface Mount | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-263 | ||
Mounting Type Surface Mount | ||
The Vishay Semiconductor E series power mosfet have low figure of merit (FOM) Ron x Qg and low input capacitance (Ciss).
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
