Diodes Inc N-Channel MOSFET, 40 A, 60 V, 8-Pin PowerDI5060-8 DMT6011LPDW-13
- RS Stock No.:
- 246-7555P
- Mfr. Part No.:
- DMT6011LPDW-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£29.35
(exc. VAT)
£35.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,475 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 75 | £0.587 |
| 100 - 225 | £0.422 |
| 250 + | £0.412 |
*price indicative
- RS Stock No.:
- 246-7555P
- Mfr. Part No.:
- DMT6011LPDW-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerDI5060-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.022 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerDI5060-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.022 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±12 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate
