Diodes Inc N-Channel MOSFET, 1.7 A, 20 V, 3-Pin U-DFN1212-3 DMN2310UFD-7
- RS Stock No.:
- 246-7511P
- Mfr. Part No.:
- DMN2310UFD-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£2.00
(exc. VAT)
£2.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,875 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 75 | £0.04 |
| 100 - 225 | £0.039 |
| 250 - 975 | £0.038 |
| 1000 + | £0.037 |
*price indicative
- RS Stock No.:
- 246-7511P
- Mfr. Part No.:
- DMN2310UFD-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | U-DFN1212-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.95V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type U-DFN1212-3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage
