Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1

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Subtotal 75 units (supplied on a continuous strip)*

£43.275

(exc. VAT)

£51.90

(inc. VAT)

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Packaging Options:
RS Stock No.:
229-1845P
Mfr. Part No.:
IPG20N04S4L11AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

SuperSO8 5 x 6 Dual

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0116 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon dual n channel logic level MOSFET is feasible for automatic optical inspection. It has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified