SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L040N120SC1

RS Stock No.:: 202-5738
Mfr. Part No.:: NVH4L040N120SC1
Brand:: onsemi

SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L040N120SC1

420 In stock - FREE next working day delivery available

Added

Price Each (In a Pack of 2)

£34.37

(exc. VAT)

£41.24

(inc. VAT)

Units	Per unit	Per Pack*
2 - 8	£34.37	£68.74
10 - 24	£31.685	£63.37
26 - 48	£30.725	£61.45
50 - 98	£29.80	£59.60
100 +	£26.74	£53.48
*price indicative

RS Stock No.:: 202-5738
Mfr. Part No.:: NVH4L040N120SC1
Brand:: onsemi

Technical Reference

Datasheet - NVH4L040N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	58 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247-4
Series	NVH
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	0.056 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3V
Transistor Material	SiC
Number of Elements per Chip	1

RS Stock No.:: 202-5738
Mfr. Part No.:: NVH4L040N120SC1
Brand:: onsemi

Datasheet - NVH4L040N120SC1

SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247-4 onsemi NVH4L040N120SC1

Technical Reference

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L

Specifications

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L

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