SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 3-Pin TO-247 ON Semiconductor NTHL160N120SC1
- RS Stock No.:
- 202-5707
- Mfr. Part No.:
- NTHL160N120SC1
- Brand:
- onsemi
4 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 2)
£6.38
(exc. VAT)
£7.66
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | £6.38 | £12.76 |
| 10 - 98 | £5.50 | £11.00 |
| 100 - 248 | £4.595 | £9.19 |
| 250 - 498 | £4.45 | £8.90 |
| 500 + | £4.075 | £8.15 |
| *price indicative | ||
- RS Stock No.:
- 202-5707
- Mfr. Part No.:
- NTHL160N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Series | NTH |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.11 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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