SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 Infineon IMW120R030M1HXKSA1
- RS Stock No.:
- 201-2807
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 201-2807
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 30 mO SiC MOSFET build on a state of the trench semiconductor process helped to combine performance with reliability. It can be used in solutions for solar energy systems, Electron volt charging, Uninterruptible power supply (UPS), Power Supplies, Motor Control and Drives and many other applications.
Powerful body diode for hard commutation
Fully controllable dV/dt
0V turn-off gate voltage for easy and simple gate drive
Broad gate-source voltage range
Fully controllable dV/dt
0V turn-off gate voltage for easy and simple gate drive
Broad gate-source voltage range
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 56 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | PG-TO247-3 |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.056 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.7V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
| Series | CoolSiC |