SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 onsemi NVHL080N120SC1
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Available to back order for despatch 28/10/2024
Added
Price Each
£23.66
(exc. VAT)
£28.39
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £23.66 |
| 10 - 99 | £23.01 |
| 100 - 249 | £22.41 |
| 250 - 499 | £21.83 |
| 500 + | £21.29 |
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 162 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 348 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -15 V, +25 V |
| Typical Gate Charge @ Vgs | 56 nC @ 20 V |
| Length | 15.87mm |
| Transistor Material | SiC |
| Width | 4.82mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Height | 20.82mm |
| Forward Diode Voltage | 4V |
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