SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1
- RS Stock No.:
- 189-0416
- Mfr. Part No.:
- NTHL080N120SC1
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 189-0416
- Mfr. Part No.:
- NTHL080N120SC1
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Applications
PFC
Boost Inverter
PV Charging
End Products
Solar Inverter
Network Power Supply
Server Power Supply
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Applications
PFC
Boost Inverter
PV Charging
End Products
Solar Inverter
Network Power Supply
Server Power Supply
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 162 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.3V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 348 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -15 V, +20 V |
| Width | 4.82mm |
| Transistor Material | SiC |
| Length | 15.87mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 56 nC @ 20 V |
| Minimum Operating Temperature | -55 °C |
| Height | 20.82mm |
| Forward Diode Voltage | 4V |