onsemi N-Channel MOSFET, 250 A, 60 V, 8-Pin LFPAK8 NTMJS1D6N06CLTWG
- RS Stock No.:
- 189-0312P
- Mfr. Part No.:
- NTMJS1D6N06CLTWG
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£89.10
(exc. VAT)
£106.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £1.782 |
| 100 + | £1.546 |
*price indicative
- RS Stock No.:
- 189-0312P
- Mfr. Part No.:
- NTMJS1D6N06CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 250 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | LFPAK8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 167 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 4.9mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.2mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type LFPAK8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 167 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 4.9mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Forward Diode Voltage 1.2V | ||
Height 1.2mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb-Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
These Devices are Pb-Free