- RS Stock No.:
- 188-4999
- Mfr. Part No.:
- SISF02DN-T1-GE3
- Brand:
- Vishay
- RS Stock No.:
- 188-4999
- Mfr. Part No.:
- SISF02DN-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 25 V |
Package Type | PowerPAK 1212-8SCD |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.3V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 69.4 W |
Transistor Configuration | Common Drain |
Maximum Gate Source Voltage | -12 V, +16 V |
Number of Elements per Chip | 2 |
Width | 3.4mm |
Typical Gate Charge @ Vgs | 37 nC @ 10 V |
Length | 3.4mm |
Maximum Operating Temperature | +150 °C |
Height | 0.75mm |
Minimum Operating Temperature | -55 °C |