N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-247AC Vishay SIHG22N60EF-GE3
- RS Stock No.:
- 188-4992
- Mfr. Part No.:
- SIHG22N60EF-GE3
- Brand:
- Vishay
Available to back order for despatch 20/11/2024
Added
Price Each (In a Pack of 2)
£2.125
(exc. VAT)
£2.55
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 18 | £2.125 | £4.25 |
| 20 - 48 | £1.915 | £3.83 |
| 50 - 98 | £1.805 | £3.61 |
| 100 - 198 | £1.70 | £3.40 |
| 200 + | £1.63 | £3.26 |
| *price indicative | ||
- RS Stock No.:
- 188-4992
- Mfr. Part No.:
- SIHG22N60EF-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
EF Series Power MOSFET With Fast Body Diode.
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 182 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 179 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Length | 15.87mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Height | 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |