N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S Vishay SISS42LDN-T1-GE3

Discontinued product

Technical Reference

N-Channel 100 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	39 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK 1212-S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	32 nC @ 10 V
Length	3.3mm
Width	3.3mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V
Height	0.78mm