Diodes Inc Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 DMT6018LDR-13
- RS Stock No.:
- 182-7493P
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Subtotal 10 units (supplied on a continuous strip)*
£4.36
(exc. VAT)
£5.23
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 29,980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £0.436 |
*price indicative
- RS Stock No.:
- 182-7493P
- Mfr. Part No.:
- DMT6018LDR-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.4 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | V-DFN3030 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.9 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.05mm | |
| Number of Elements per Chip | 2 | |
| Length | 3.05mm | |
| Typical Gate Charge @ Vgs | 13.9 nC @ 10V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.4 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type V-DFN3030 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.9 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.05mm | ||
Number of Elements per Chip 2 | ||
Length 3.05mm | ||
Typical Gate Charge @ Vgs 13.9 nC @ 10V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Applications
Power Management Functions
Analog Switch