Diodes Inc P-Channel MOSFET, 250 mA, 450 V, 3-Pin SOT-223 DMP45H150DHE-13
- RS Stock No.:
- 182-7409P
- Mfr. Part No.:
- DMP45H150DHE-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£75.25
(exc. VAT)
£90.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 450 | £0.301 |
| 500 - 950 | £0.241 |
| 1000 - 1950 | £0.201 |
| 2000 + | £0.185 |
*price indicative
- RS Stock No.:
- 182-7409P
- Mfr. Part No.:
- DMP45H150DHE-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 250 mA | |
| Maximum Drain Source Voltage | 450 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 59.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 10V | |
| Width | 3.55mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.55mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 450 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 59.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 1.8 nC @ 10V | ||
Width 3.55mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.55mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Height 1.65mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits.
Low Gate Drive
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switching
Uninterrupted Power Supply