N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G

  • RS Stock No. 177-9760
  • Mfr. Part No. 2N7000-G
  • Brand Microchip
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5.3 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage 30 V
Number of Elements per Chip 1
Width 4.06mm
Length 5.08mm
Series 2N7000
Minimum Operating Temperature -55 °C
Forward Diode Voltage 0.85V
Maximum Operating Temperature +150 °C
Height 5.33mm
475 In stock - FREE next working day delivery available
Price Each (In a Pack of 25)
£ 0.236
(exc. VAT)
£ 0.283
(inc. VAT)
Units
Per unit
Per Pack*
25 - 75
£0.236
£5.90
100 +
£0.216
£5.40
*price indicative
Packaging Options:
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