N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1
- RS Stock No.:
- 170-2320
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Brand:
- Infineon
Available to back order for despatch 07/02/2025
Added
Price Each (On a Reel of 2000)
£2.396
(exc. VAT)
£2.875
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2000 + | £2.396 | £4,792.00 |
| *price indicative | ||
- RS Stock No.:
- 170-2320
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon MOSFET
The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Ideal for high switching frequency
• Lead (Pb) free plating
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Ideal for high switching frequency
• Lead (Pb) free plating
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
Applications
• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecom
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecom
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HSOF-8 |
| Series | IPT015N10N5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Typical Gate Charge @ Vgs | 169 nC @ 10 V |
| Length | 10.1mm |
| Maximum Operating Temperature | +175 °C |
| Width | 10.58mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 2.4mm |
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