RS Components
Our website uses cookies and similar technologies to provide you with a better service while searching or placing an order, for analytical purposes and to personalise our advertising to you.

N-Channel MOSFET, 29 A, 60 V, 3-Pin DPAK Infineon IPD350N06LGBTMA1

Available to back order for despatch 27/04/2021
Add to Basket

Price Each (On a Reel of 2500)


(exc. VAT)


(inc. VAT)



RS Stock No.:
Mfr. Part No.:

RoHS Status: Exempt

COO (Country of Origin):
UnitsPer unitPer Reel*
2500 +£0.18£450.00
*price indicative

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Channel TypeN
Maximum Continuous Drain Current29 A
Maximum Drain Source Voltage60 V
Package TypeDPAK (TO-252)
Mounting TypeSurface Mount
Pin Count3
Maximum Drain Source Resistance47 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage2V
Minimum Gate Threshold Voltage1.2V
Maximum Power Dissipation68 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Minimum Operating Temperature-55 °C
Typical Gate Charge @ Vgs10 nC @ 5 V
Transistor MaterialSi
Forward Diode Voltage1.3V
Maximum Operating Temperature+170 °C