P-Channel MOSFET, 980 mA, 100 V, 3 + Tab-Pin SOT-223 Infineon BSP321PH6327XTSA1

  • RS Stock No. 165-8179
  • Mfr. Part No. BSP321PH6327XTSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 980 mA
Maximum Drain Source Voltage 100 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 900 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 1.8 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Forward Diode Voltage 1.2V
Transistor Material Si
Minimum Operating Temperature -55 °C
Length 6.5mm
Height 3.5mm
Series SIPMOS
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 9 nC @ 10 V
Width 1.6mm
Available to back order for despatch 17/06/2020
Price Each (On a Reel of 1000)
£ 0.239
(exc. VAT)
£ 0.287
(inc. VAT)
Units
Per unit
Per Reel*
1000 +
£0.239
£239.00
*price indicative
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