N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK Infineon IPD78CN10NGATMA1
- RS Stock No.:
- 165-8059
- Mfr. Part No.:
- IPD78CN10NGATMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 165-8059
- Mfr. Part No.:
- IPD78CN10NGATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 31 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 8 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73mm |
| Transistor Material | Si |
| Width | 6.22mm |
| Series | OptiMOS 2 |
| Minimum Operating Temperature | -55 °C |
| Height | 2.41mm |
| Forward Diode Voltage | 1.2V |