N-Channel MOSFET, 70 A, 100 V, 3-Pin I2PAK Infineon IPI70N10S312AKSA1

  • RS Stock No. 165-5179
  • Mfr. Part No. IPI70N10S312AKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Status: Exempt
COO (Country of Origin): CN
Product Details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 70 A
Maximum Drain Source Voltage 100 V
Package Type I2PAK (TO-262)
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 11.3 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Typical Gate Charge @ Vgs 51 nC @ 10 V
Height 9.45mm
Series OptiMOS
Width 4.52mm
Minimum Operating Temperature -55 °C
Length 10.36mm
Maximum Operating Temperature +175 °C
Discontinued product