- RS Stock No.:
- 162-9710
- Mfr. Part No.:
- C2M1000170J
- Brand:
- Wolfspeed
- RS Stock No.:
- 162-9710
- Mfr. Part No.:
- C2M1000170J
- Brand:
- Wolfspeed
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 5.3 A |
Maximum Drain Source Voltage | 1700 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 1.4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 78 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -10 V, +25 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Length | 10.23mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 13 nC @ 20 V |
Width | 10.99mm |
Height | 4.57mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 3.8V |
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