- RS Stock No.:
- 162-3279
- Mfr. Part No.:
- IRF1010EZSTRLP
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 162-3279
- Mfr. Part No.:
- IRF1010EZSTRLP
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 84 A |
Maximum Drain Source Voltage | 60 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 140 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 58 nC @ 10 V |
Width | 9.65mm |
Forward Diode Voltage | 1.3V |
Series | IRF1010EZS |
Height | 4.83mm |
Minimum Operating Temperature | -55 °C |