Nexperia N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN3R5-30YL,115

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Packaging Options:
RS Stock No.:
153-2878
Mfr. Part No.:
PSMN3R5-30YL,115
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

19 nC @ 10 V

Length

5mm

Width

4.1mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies

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