N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3 Nexperia PMXB40UNEZ
- RS Stock No.:
- 153-0715
- Mfr. Part No.:
- PMXB40UNEZ
- Brand:
- Nexperia
Available to back order for despatch 30/09/2024
Added
Price Each (On a Reel of 5000)
£0.072
(exc. VAT)
£0.086
(inc. VAT)
| Units | Per unit | Per Reel* |
| 5000 + | £0.072 | £360.00 |
| *price indicative | ||
- RS Stock No.:
- 153-0715
- Mfr. Part No.:
- PMXB40UNEZ
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 34 mΩ
Very low threshold voltage of 0.65 V for portable applications
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | DFN1010D-3 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 121 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.9V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 8.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 1.15mm |
| Width | 1.05mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.36mm |
| Minimum Operating Temperature | -55 °C |
Related links
- P-Channel MOSFET -12 V, 4-Pin DFN1010D-3 Nexperia PMXB65UPEZ
- N-Channel MOSFET 20 V, 4-Pin DFN1010D-3 Nexperia PMXB43UNEZ
- P-Channel MOSFET 20 V, 4-Pin DFN1010D-3 Nexperia PMXB75UPEZ
- P-Channel MOSFET 30 V SOT1215 Nexperia PMXB120EPEZ
- N-Channel MOSFET 100 V, 3-Pin SOT-223 onsemi FDT86106LZ
- P-Channel MOSFET 20 V SOT1215 Nexperia PMXB75UPEZ
- N-Channel MOSFET 30 V, 4-Pin DFN1010D-3 Nexperia PMXB56ENZ
- N-Channel MOSFET 60 V, 4-Pin SOT-89 Infineon BSS606NH6327XTSA1