N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR
- RS Stock No.:
- 151-3187
- Mfr. Part No.:
- PMV55ENEAR
- Brand:
- Nexperia
Available to back order for despatch 16/05/2025
Added
Price Each (In a Pack of 25)
£0.286
(exc. VAT)
£0.343
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 225 | £0.286 | £7.15 |
| 250 - 600 | £0.155 | £3.875 |
| 625 - 1225 | £0.151 | £3.775 |
| 1250 - 2475 | £0.148 | £3.70 |
| 2500 + | £0.144 | £3.60 |
| *price indicative | ||
- RS Stock No.:
- 151-3187
- Mfr. Part No.:
- PMV55ENEAR
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.1 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.7V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 8.36 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Typical Gate Charge @ Vgs | 12.7 Nc @ 10 V |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
Related links
- N-Channel MOSFET 60 V, 3-Pin SOT-23 Nexperia NX7002BKR
- N-Channel MOSFET 100 V, 3-Pin SOT-23 Vishay SI2392ADS-T1-GE3
- P-Channel MOSFET 60 V215
- N-Channel MOSFET 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR
- N-Channel MOSFET 60 V215
- N-Channel MOSFET 60 V, 3-Pin SOT-23 Nexperia PMV230ENEAR
- N-Channel MOSFET 20 V, 3-Pin SOT-23 Nexperia PMV13XNEAR
- N-Channel MOSFET 60 V, 3-Pin SOT-23 Nexperia BSN20BKR