- RS Stock No.:
- 151-3118
- Mfr. Part No.:
- PMPB95ENEAX
- Brand:
- Nexperia
Available to back order for despatch 15/05/2025
Added
Price Each (In a Pack of 25)
£0.334
(exc. VAT)
£0.401
(inc. VAT)
Units | Per unit | Per Pack* |
25 - 225 | £0.334 | £8.35 |
250 - 600 | £0.244 | £6.10 |
625 - 1225 | £0.237 | £5.925 |
1250 - 2475 | £0.231 | £5.775 |
2500 + | £0.225 | £5.625 |
*price indicative |
- RS Stock No.:
- 151-3118
- Mfr. Part No.:
- PMPB95ENEAX
- Brand:
- Nexperia
Technical Reference
Legislation and Compliance
Product Details
80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.1 A |
Maximum Drain Source Voltage | 80 V |
Package Type | DFN2020 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 202 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.7V |
Minimum Gate Threshold Voltage | 1.3V |
Maximum Power Dissipation | 15.6 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Width | 2.1mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 9.9 nC @ 4 V |
Length | 2.1mm |
Height | 0.65mm |
Minimum Operating Temperature | -55 °C |
Automotive Standard | AEC-Q101 |
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