SiC N-Channel MOSFET, 4 A, 1700 V, 3-Pin TO-268 ROHM SCT2H12NYTB
- RS Stock No.:
- 148-6940
- Mfr. Part No.:
- SCT2H12NYTB
- Brand:
- ROHM
Discontinued product
- RS Stock No.:
- 148-6940
- Mfr. Part No.:
- SCT2H12NYTB
- Brand:
- ROHM
Technical Reference
Legislation and Compliance
Product Details
Low on-resistance
Fast switching speed
Long creepage distance with no center lead
Simple to drive
Pb-free lead plating, RoHS compliant
Fast switching speed
Long creepage distance with no center lead
Simple to drive
Pb-free lead plating, RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 1700 V |
| Package Type | TO-268 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.71 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.6V |
| Maximum Power Dissipation | 44 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 14 nC @ 18 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 13.9mm |
| Length | 15.95mm |
| Forward Diode Voltage | 4.3V |
| Height | 5mm |