P-Channel MOSFET, 13.2 A, 60 V, 3-Pin TO-220 Infineon SPP18P06PHXKSA1

RS Stock No.:: 145-9659
Mfr. Part No.:: SPP18P06PHXKSA1
Brand:: Infineon

P-Channel MOSFET, 13.2 A, 60 V, 3-Pin TO-220 Infineon SPP18P06PHXKSA1

View all MOSFETs

Discontinued product

RS Stock No.:: 145-9659
Mfr. Part No.:: SPP18P06PHXKSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	13.2 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	81.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.57mm
Typical Gate Charge @ Vgs	21 nC @ 10 V
Length	10.36mm
Transistor Material	Si
Series	SIPMOS
Height	15.95mm
Minimum Operating Temperature	-55 °C

RS Stock No.:: 145-9659
Mfr. Part No.:: SPP18P06PHXKSA1
Brand:: Infineon