N-Channel MOSFET, 86 A, 55 V, 3-Pin I2PAK Infineon AUIRL3705ZL

  • RS Stock No. 145-9455
  • Mfr. Part No. AUIRL3705ZL
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 86 A
Maximum Drain Source Voltage 55 V
Package Type I2PAK (TO-262)
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 12 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 130 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Maximum Operating Temperature +175 °C
Length 10.67mm
Transistor Material Si
Typical Gate Charge @ Vgs 40 nC @ 5 V
Height 9.65mm
Width 4.83mm
Minimum Operating Temperature -55 °C
Series HEXFET
Available to back order for despatch 12/10/2020
Price Each (In a Tube of 50)
£ 1.676
(exc. VAT)
£ 2.011
(inc. VAT)
Units
Per unit
Per Tube*
50 +
£1.676
£83.80
*price indicative
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