- RS Stock No.:
- 145-8801
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 17/02/2025
Added
Price Each (On a Reel of 3000)
£0.078
(exc. VAT)
£0.094
(inc. VAT)
Units | Per unit | Per Reel* |
3000 - 3000 | £0.078 | £234.00 |
6000 - 12000 | £0.074 | £222.00 |
15000 + | £0.069 | £207.00 |
*price indicative |
- RS Stock No.:
- 145-8801
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 330 mA |
Maximum Drain Source Voltage | 60 V |
Series | SIPMOS |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 360 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 2.9mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 1.3mm |
Typical Gate Charge @ Vgs | 2.38 nC @ 10 V |
Height | 1mm |
Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 145-8801
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Brand:
- Infineon
Related links
- P-Channel MOSFET 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
- P-Channel MOSFET Transistor 60 V, 3-Pin SOT-23 Infineon ISS55EP06LMXTSA1
- N-Channel MOSFET 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
- P-Channel MOSFET 20 VF)
- P-Channel MOSFET 20 V, 3-Pin UFM Toshiba SSM3J36TU(TE85L)
- P-Channel MOSFET Transistor 60 V, 3-Pin SOT-23 Infineon ISS17EP06LMXTSA1
- Dual P-Channel MOSFET 20 VF)
- N-Channel MOSFET 60 V, 3-Pin SOT-23 Nexperia BSN20BKR