N-Channel MOSFET, 70 A, 500 V, 3-Pin ISOPLUS264 IXYS IXFL100N50P
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Brand:
- IXYS
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Added
Price Each
£28.05
(exc. VAT)
£33.66
(inc. VAT)
| Units | Per unit |
| 1 - 1 | £28.05 |
| 2 - 4 | £25.30 |
| 5 - 9 | £24.63 |
| 10 - 24 | £24.01 |
| 25 + | £23.42 |
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-Channel Power MOSFET, IXYS HiperFET PolarHV Series
A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage | 500 V |
| Series | PolarHVTM HiPerFET |
| Package Type | ISOPLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 52 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 625 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Length | 20.29mm |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 26.42mm |
| Forward Diode Voltage | 1.5V |
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Brand:
- IXYS