SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247 Wolfspeed C3M0065100K

  • RS Stock No. 125-3453
  • Mfr. Part No. C3M0065100K
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery

MOSFET Transistors, Cree Inc.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 35 A
Maximum Drain Source Voltage 1000 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 113.5 W
Maximum Gate Source Voltage -8 V, +19 V
Number of Elements per Chip 1
Length 16.13mm
Forward Diode Voltage 4.8V
Transistor Material SiC
Width 5.21mm
Minimum Operating Temperature -55 °C
Height 23.6mm
Typical Gate Charge @ Vgs 35 nC @ 15 V, 35 nC @ 4 V
Series C3M
Maximum Operating Temperature +150 °C
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