- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Brand:
- Wolfspeed
- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Brand:
- Wolfspeed
Legislation and Compliance
Product Details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113.5 W |
Maximum Gate Source Voltage | -8 V, +19 V |
Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V |
Number of Elements per Chip | 1 |
Width | 5.21mm |
Length | 16.13mm |
Transistor Material | SiC |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 4.8V |
Minimum Operating Temperature | -55 °C |
Series | C3M |
Height | 23.6mm |
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