N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

Discontinued product

Technical Reference

MOSFET Transistors, NXP Semiconductors

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Voltage	100 V
Package Type	SOT-23 (TO-236AB)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	830 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	1.4mm
Typical Gate Charge @ Vgs	4.6 nC @ 10 V
Length	3mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C